STP3NA80 Datasheet PDF - ST Microelectronics

DESCRIPTION

●This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

●■ TYPICAL RDS(on) = 3.5 Ω

●■ ± 30V GATE TO SOURCE VOLTAGE RATING

●■ 100% AVALANCHE TESTED

●■ REPETITIVE AVALANCHE DATA AT 100oC

●■ LOW INTRINSIC CAPACITANCES

●■ GATE GHARGE MINIMIZED

●■ REDUCED THRESHOLD VOLTAGE SPREAD

●APPLICATIONS

●■ HIGH CURRENT, HIGH SPEED SWITCHING

●■ SWITCH MODE POWER SUPPLIES (SMPS)

●■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE