| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 1000 V |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 12.5 A |
| Rise Time | 7.5 ns |
| Input Capacitance (Ciss) | 601pF @25V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs.
●Features
●■ Extremely high dv/dt capability
●■ 100% avalanche tested
●■ Gate charge minimized
●■ Very low intrinsic capacitances
●■ Very good manufacturing repeatability
●Application
●■ Switching applications
ST Microelectronics
16 Pages / 0.4 MByte
ST Microelectronics
14 Pages / 0.6 MByte
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