TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 4.8 Ω |
Polarity | N-Channel |
Power Dissipation | 25 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 900 V |
Continuous Drain Current (Ids) | 3.00 A |
Rise Time | 7 ns |
Input Capacitance (Ciss) | 590pF @25V(Vds) |
Input Power (Max) | 25 W |
Fall Time | 18 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 25W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP3NK90ZFP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● 100% Avalanche tested
● Very low intrinsic capacitance
● Extremely high dV/dt capability
ST Microelectronics
13 Pages / 0.59 MByte
ST Microelectronics
21 Pages / 0.62 MByte
ST Microelectronics
20 Pages / 0.64 MByte
ST Microelectronics
34 Pages / 0.79 MByte
ST Microelectronics
1 Pages / 0.13 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.