| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.067 Ω |
| Polarity | N-Channel |
| Power Dissipation | 210 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3470 pF |
| Drain to Source Voltage (Vds) | 650 V |
| Input Capacitance (Ciss) | 3375pF @100V(Vds) |
| Input Power (Max) | 208 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 210W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
The STP45N65M5 is a 650V N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The MOSFET has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Worldwide best RDS (on)
● Higher VDSS rating and high dv/dt capability
● Excellent switching performance
● 100% Avalanche tested
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
STMICROELECTRONICS STP45N65M5 Power MOSFET, N Channel, 35A, 650V, 0.067Ω, 10V, 4V
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