| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 20 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 310pF @25V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 20W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
DESCRIPTION
●The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
●■ TYPICAL RDS(on) = 2.3 Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ GATE CHARGE MINIMIZED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ VERY GOOD MANUFACTURING REPEATIBILITY
ST Microelectronics
13 Pages / 0.65 MByte
ST Microelectronics
28 Pages / 1.03 MByte
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ST Microelectronics
MOSFET N-CH 500V 3A TO-220FP
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