TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 25 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 2 Ω |
Polarity | N-Channel |
Power Dissipation | 25 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 4.00 A |
Rise Time | 9.5 ns |
Input Capacitance (Ciss) | 510pF @25V(Vds) |
Input Power (Max) | 25 W |
Fall Time | 16.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 25000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.3 mm |
Operating Temperature | 150℃ (TJ) |
The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● 100% Avalanche tested
● Very low intrinsic capacitance
● Zener-protected
●ESD sensitive device, take proper precaution while handling the device.
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