| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 55A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
DESCRIPTION
●This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"
●strip-based process. The resulting transistor shows extremely high packing density for low on
●resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility.
●■ TYPICAL RDS(on) = 0.01 Ω
●■ OPTIMIZED FOR HIGH SWITCHING OPERATIONS
●■ LOW GATE CHARGE
●■ LOGIC LEVEL GATE DRIVE
●APPLICATIONS
●■ LOW VOLTAGE DC-DC CONVERTERS
●■ HIGH CURRENT, HIGH SWITCHING SPEED
●■ HIGH EFFICIENCY SWITCHING CIRCUITS
ST Microelectronics
11 Pages / 0.32 MByte
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