TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 50.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.018 Ω |
Polarity | N-Channel |
Power Dissipation | 30 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 50.0 A |
Rise Time | 50 ns |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Input Power (Max) | 30 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 30000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STP55NF06FP is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
● 100% Avalanche tested
● Exceptional dV/dt capability
● -55 to 175°C Operating junction temperature range
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