| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 55 V |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 2200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 11.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Amplify electronic signals and switch between them with the help of STMicroelectronics" STP60N55F3 power MOSFET. Its maximum power dissipation is 110000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with stripfet iii technology.
ST Microelectronics
20 Pages / 0.6 MByte
ST Microelectronics
N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET
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