TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 60.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.014 Ω |
Polarity | N-Channel |
Power Dissipation | 110 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±15.0 V |
Continuous Drain Current (Ids) | 60.0 A |
Rise Time | 220 ns |
Input Capacitance (Ciss) | 2000pF @25V(Vds) |
Input Power (Max) | 110 W |
Fall Time | 30 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | -65℃ ~ 175℃ (TJ) |
The STP60NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique sTripFET process which minimizes input capacitance and gate charge hence suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application and intended for any application with low gate charge drive.
● Exceptional dv/dt capability
● Avalanche tested
● Drain to source voltage (Vds) of 60V
● Gate to source voltage of ±15V
● Continuous drain current (Id) of 60A
● Power dissipation (Pd) of 110W
● Low on state resistance of 12mohm at Vgs 10V
● Operating junction temperature range from -65°C to 175°C
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Trans MOSFET N-CH 60V 60A 3Pin(3+Tab) TO-220 Tube
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