| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 60.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0115 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.70 nF |
| Gate Charge | 75.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STP65NF06 is a 60V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Standard level gate drive
● 100% Avalanche tested
ST Microelectronics
14 Pages / 0.32 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
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