| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 190 W |
| Drain to Source Voltage (Vds) | 68 V |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 2550pF @25V(Vds) |
| Fall Time | 75 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore
●suitable in advanced high-efficiency switching applications.
●■ Exceptional dv/dt capability
●■ 100% avalanche tested
●Application
●■ Switching applications
ST Microelectronics
12 Pages / 0.42 MByte
ST Microelectronics
N-CHANNEL 75V - 0.0095Ω - 80A TO-220/TO-220FP/DPAK STripFET⑩ II POWER MOSFET
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