| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 11 mΩ |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 33 V |
| Breakdown Voltage (Drain to Source) | 33 V |
| Continuous Drain Current (Ids) | 80A |
| Rise Time | 248 ns |
| Input Capacitance (Ciss) | 1860pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 85 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description
●This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encoured in power tools. Any other application requiring extra ruggedness is also recommended.
●■ Low capacitance and gate charge
●■ 100% avalanche tested
●■ 175°C maximum junction temperature
●Applications
●■ Switching application
●■ Power tools
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
1 Pages / 0.12 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
