TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.95 Ω |
Polarity | N-Channel |
Power Dissipation | 90 W |
Threshold Voltage | 4 V |
Input Capacitance | 620 pF |
Drain to Source Voltage (Vds) | 800 V |
Continuous Drain Current (Ids) | 3.25 A |
Rise Time | 8 ns |
Input Capacitance (Ciss) | 620pF @25V(Vds) |
Input Power (Max) | 90 W |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 90W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP7NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product offers low ON-resistance, high dV/dt capability and excellent avalanche characteristics.
● 100% Avalanche tested
● Low gate input resistance
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