TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 80.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.008 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55.0 V |
Breakdown Voltage (Gate to Source) | ±16.0 V |
Continuous Drain Current (Ids) | 80.0 A |
Rise Time | 180 ns |
Input Capacitance (Ciss) | 4850pF @25V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 80 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STP80NF55L-06 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● 0.005R RDS (ON)
● Low threshold drive
● Logic level device
● Surface-mount power package
● -55 to 175°C Operating junction temperature range
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