| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Breakdown Voltage (Gate to Source) | ±16.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 145 ns |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
DESCRIPTION
●This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteris tics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●■ TYPICAL RDS(on) = 0.0065Ω
●■ LOW THRESHOLD DRIVE
●■ LOGIC LEVEL DEVICE
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