| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0046 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 1850pF @25V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 10.8 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 175℃ (TJ) |
The STP85N3LH5 is a N-channel Power MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. The lowest available RDS (ON)
●Qg, in the standard packages, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.
● RDS (ON) x Qg industry benchmark
● Extremely low ON-resistance RDS (ON)
● High avalanche ruggedness
● Low gate drive power losses
ST Microelectronics
16 Pages / 0.79 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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