| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.56 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 7A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 690pF @100V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
Create an effective common drain amplifier using this STP8N65M5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 70000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh v technology.
ST Microelectronics
26 Pages / 1.44 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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26 Pages / 1.42 MByte
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4 Pages / 0.01 MByte
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