| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 35 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 700 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1370pF @25V(Vds) |
| Input Power (Max) | 35 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP9NK70ZFP is a 700V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● Improved ESD capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Very good manufacturing repeatability
●ESD sensitive device, take proper precaution while handling the device.
ST Microelectronics
14 Pages / 0.65 MByte
ST Microelectronics
13 Pages / 0.59 MByte
ST Microelectronics
N-CHANNEL 700V 1Ω 7.5A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
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