The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
●Key Features
● AEC-Q101 qualified
● No or negligible reverse recovery
● Switching behavior independent of temperature
● Dedicated to PFC applications
● High forward surge capability
● PPAP capable
● ECOPACK® 2 compliant component
ST Microelectronics
11 Pages / 0.54 MByte
ST Microelectronics
24 Pages / 1.04 MByte
ST Microelectronics
26 Pages / 2.4 MByte
ST Microelectronics
650V power Schottky silicon carbide diode
ST Microelectronics
STMICROELECTRONICS STPSC10H065D Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-220AC
ST Microelectronics
STMICROELECTRONICS STPSC10H065DY Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-220AC
ST Microelectronics
Diode Schottky 650V 10A 2Pin TO-220AC Tube
ST Microelectronics
STMICROELECTRONICS STPSC10H065B-TR Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-252
ST Microelectronics
STMICROELECTRONICS STPSC10H065G-TR Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-263
ST Microelectronics
Schottky Diodes & Rectifiers Automotive 650V power Schottky silicon carbide diode
ST Microelectronics
Diode Schottky SiC 650V 10A Automotive 3-Pin(2+Tab) DPAK T/R
ST Microelectronics
Automotive 650V power Schottky silicon carbide diode
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
