| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Forward Voltage | 1.7 V |
| Thermal Resistance | 1.2 ℃/W |
| Reverse recovery time | 0 ns |
| Forward Current | 20 A |
| Max Forward Surge Current (Ifsm) | 40 A |
| Maximum Forward Voltage (Max) | 1.7 V |
| Forward Current (Max) | 20000 mA |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ |
The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
● No or negligible reverse recovery
● Switching behaviour independent of temperature
● Particularly suitable in PFC boost diode function
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