| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Forward Current | 20 A |
| Max Forward Surge Current (Ifsm) | 400 A |
| Maximum Forward Voltage (Max) | 1.65 V |
| Forward Current (Max) | 40 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
●Key Features
● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Dedicated to PFC applications
● AEC-Q101 qualified
● PPAP capable
● ECOPACK®2 compliant component
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