| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 500 mA |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 156pF @25V(Vds) |
| Input Power (Max) | 3 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.95 mm |
| Size-Width | 3.94 mm |
| Size-Height | 4.95 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The STQ1HNK60R-AP is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
● Extremely high dV/dt capability
● Improved ESD capability
● New high voltage benchmark
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N-CHANNEL 600V - 8Ω - 1A DPAK/IPAK/TO-92/SOT-223 SUPERMESH MOSFET
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