| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 500 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @50mA, 10V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.75 mm |
| Size-Height | 1.3 mm |
| Operating Temperature | 150℃ (TJ) |
Compared to other transistors, the PNP STR2550 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.
ST Microelectronics
10 Pages / 0.51 MByte
ST Microelectronics
60 Pages / 0.15 MByte
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