STS1NK60Z Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	SOIC-8
Description:	N-CHANNEL 600V 13Ω 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET
Documentation:	STS1NK60Z Datasheet (8 Pages)Part Numbering System on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STS1NK60Z Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Voltage Rating (DC)	600 V
Current Rating	250 mA
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	13 Ω
Polarity	N-Channel
Power Dissipation	2 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	250 mA
Rise Time	5 ns
Input Capacitance (Ciss)	94pF @25V(Vds)
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2W (Tc)