STS30N3LLH6 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	SOIC-8
Description:	N-channel 30V, 0.0016Ω; , 30A, SO-8 STripFET(TM); VI DeepGATE(TM); Power MOSFET
Documentation:	STS30N3LLH6 Datasheet (13 Pages)Package Outline Dimension on10 Page 11 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STS30N3LLH6 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Dissipation	2.7W (Tc)
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Rise Time	18 ns
Input Capacitance (Ciss)	4040pF @25V(Vds)
Input Power (Max)	2.7 W
Fall Time	46 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.7W (Tc)