| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 8.00 A |
| Case/Package | SOIC-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±16.0 V |
| Continuous Drain Current (Ids) | 8.00 A, 4.20 A |
| Rise Time | 35.0 ns |
| Input Capacitance (Ciss) | 857pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | 150℃ (TJ) |
The STS8C5H30L is a N/P-channel Power MOSFET for switching applications. This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low ON-resistance and rugged avalanche characteristics.
● Conduction losses reduced
● Switching losses reduced
● Low threshold drive
● Standard outline for easy automated surface-mount assembly
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