| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-23-6 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.6 W |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 33 ns |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.05 mm |
| Size-Width | 1.75 mm |
| Size-Height | 1.3 mm |
DESCRIPTION
●This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark
●able manufacturing reproducibility.
●■ TYPICAL RDS(on) = 0.030 Ω @ 4.5 V
●■ TYPICAL RDS(on) = 0.037 Ω @ 2.7 V
●■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)
●■ STANDARD OUTLINE FOR EASY
●AUTOMATED SURFACE MOUNT ASSEMBLY
ST Microelectronics
8 Pages / 0.22 MByte
ST Microelectronics
8 Pages / 0.22 MByte
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