TYPE | DESCRIPTION |
---|
Mounting Style | Screw |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 1.20 kV |
Current Rating | 60.0 A |
Case/Package | ISOTOP |
Output Current | ≤60.0 A |
Forward Voltage | 2.25V @60A |
Polarity | Standard |
Reverse recovery time | 125 ns |
Forward Current | 60 A |
Max Forward Surge Current (Ifsm) | 420 A |
Maximum Forward Voltage (Max) | 1.3 V |
Forward Current (Max) | 120 A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Junction Temperature | 150℃ (Max) |
Junction Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 38.2 mm |
Size-Width | 25.5 mm |
Size-Height | 9.1 mm |
Operating Temperature | -65℃ ~ 150℃ |
The STTH12012TV1 is an Ultra-fast Recovery Diode with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies and similar mission-critical systems that require rectification and free-wheeling. It fit into auxiliary functions such as snubber, bootstrap and demagnetization applications. The improved performance in low leakage current and therefore thermal runaway guard band, is an immediate competitive advantage for this device.
● Soft recovery
● Very low conduction and switching losses
● High frequency and/or high pulsed current operation
● High reverse voltage capability
● High junction temperature
ST Microelectronics
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