| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0076 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 1620pF @25V(Vds) |
| Input Power (Max) | 60 W |
| Fall Time | 4.2 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.9 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STU60N3LH5 is a STripFET™ H5 N-channel Power MOSFET optimized to achieve very low ON-state resistance, contributing to a FoM that is among the best in its class.
● Low ON-resistance RDS (ON)
● High avalanche ruggedness
● Low gate drive power loss
● -55 to 175°C Operating junction temperature
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