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STU6N62K3
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STU6N62K3 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:MOSFETs
Case Package:TO-251-3
Description:N-Channel 620V 1.2Ω 30NC Through Hole SuperMESH3™ Power Mosfet - IPAK
Documentation:STU6N62K3 Datasheet (19 Pages)Package Outline Dimension on10 Page11 Page12 Page13 Page14 Page
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STU6N62K3 Datasheet PDF (19 Pages)
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STU6N62K3 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-251-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.95 Ω
PolarityN-Channel
Power Dissipation90 W
Threshold Voltage3.75 V
Drain to Source Voltage (Vds)620 V
Rise Time12.5 ns
Input Capacitance (Ciss)875pF @50V(Vds)
Input Power (Max)90 W
Fall Time19 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)90W (Tc)
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STU6N62K3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length6.6 mm
Size-Width2.4 mm
Size-Height6.2 mm
Operating Temperature150℃ (TJ)
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STU6N62K3 Documents

STU6N62K3 Datasheet
ST Microelectronics
19 Pages / 0.94 MByte
STU6N62K3 Packaging
ST Microelectronics
19 Pages / 1.02 MByte
STU6N62K3 Notice File
ST Microelectronics
18 Pages / 0.17 MByte

STU6N62 Documents

STU6N62K3 Datasheet PDF
ST Microelectronics
N-Channel 620V 1.2Ω 30NC Through Hole SuperMESH3™ Power Mosfet - IPAK
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