| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.84 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 363pF @50V(Vds) |
| Input Power (Max) | 45 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 45W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.9 mm |
| Operating Temperature | 150℃ (TJ) |
The STU7NM60N is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product offers improved ON-resistance, low gate charge, high dV/dt capability and excellent avalanche characteristics.
● 100% Avalanche tested
● Low gate input resistance
ST Microelectronics
17 Pages / 0.85 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
26 Pages / 0.58 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
N-Channel 600V 900mΩ 14NC Through Hole MDmesh™ Power Mosfet - TO-251
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