| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | PowerSO-10 |
| Number of Positions | 10 Position |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 1.5 V |
| Input Capacitance | 7055 pF |
| Drain to Source Voltage (Vds) | 24 V |
| Rise Time | 275 ns |
| Input Capacitance (Ciss) | 7055pF @15V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 94.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 9.6 mm |
| Size-Width | 9.5 mm |
| Size-Height | 3.75 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STV300NH02L is a STripFET™ III N-channel enhancement-mode Power MOSFET developed using unique Single Feature Size™ strip-based process. The process decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
● RDS (ON) x Qg industry benchmark
● Conduction losses reduced
● Low profile, very low parasitic inductance
● Switching losses reduced
● -55 to 175°C Operating junction temperature range
ST Microelectronics
12 Pages / 0.4 MByte
ST Microelectronics
12 Pages / 0.41 MByte
ST Microelectronics
14 Pages / 0.78 MByte
ST Microelectronics
STMICROELECTRONICS STV300NH02L MOSFET Transistor, N Channel, 280A, 24V, 0.0008Ω, 10V, 1.5V
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