| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.82 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 9.2A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STW11NK90Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
● Extremely high dV/dt capability
● 100% Avalanche tested
● Very good manufacturing repeatability
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
1 Pages / 0.12 MByte
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