| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 120 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 312 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 5.20 nF |
| Gate Charge | 233 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 110 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 5200pF @25V(Vds) |
| Input Power (Max) | 312 W |
| Fall Time | 68 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 312W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STW120NF10 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize the ON-resistance. It is suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-to-DC converters for telecom and computer application. It is also intended for any applications with low gate drive requirements.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature
ST Microelectronics
21 Pages / 0.91 MByte
ST Microelectronics
21 Pages / 0.91 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Trans MOSFET N-CH 100V 110A 3Pin(3+Tab) TO-247 Tube
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