TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 950 V |
Current Rating | 10.0 A |
Case/Package | TO-247-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.69 Ω |
Polarity | N-Channel |
Power Dissipation | 230 W |
Threshold Voltage | 3.75 V |
Input Capacitance | 3500 pF |
Gate Charge | 113 nC |
Drain to Source Voltage (Vds) | 950 V |
Breakdown Voltage (Drain to Source) | 950 V |
Breakdown Voltage (Gate to Source) | 30.0 V |
Continuous Drain Current (Ids) | 10.0 A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 3500pF @25V(Vds) |
Input Power (Max) | 230 W |
Fall Time | 55 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 230W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STW12NK95Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
ST Microelectronics
14 Pages / 0.3 MByte
ST Microelectronics
15 Pages / 0.84 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
1 Pages / 0.12 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.