| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.275 Ω |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 950 V |
| Continuous Drain Current (Ids) | 17.5A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1500pF @100V(Vds) |
| Input Power (Max) | 250 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STW20N95K5 is a 950V N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Worldwide best RDS (on)
● Worldwide best FOM (figure of merit)
● Ultra low gate charge
● 100% Avalanche tested
● Zener-protected
●ESD sensitive device, take proper precaution while handling the device.
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Trans MOSFET N-CH 950V 17A 3Pin(3+Tab) TO-247 Tube
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