| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.12 Ω |
| Polarity | N-Channel |
| Power Dissipation | 313 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Input Power (Max) | 313 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
The STW26NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● High dv/dt and avalanche capabilities
● Improved ESD capability
● Low input capacitance and gate charge
●ESD sensitive device, take proper precaution while handling the device.
ST Microelectronics
12 Pages / 0.54 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
N-channel 600V, 0.145Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
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