| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.135 Ω |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1800 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 1800pF @50V(Vds) |
| Input Power (Max) | 140 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 140W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
2 Pages / 0.07 MByte
ST Microelectronics
17 Pages / 0.18 MByte
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23 Pages / 1.11 MByte
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32 Pages / 0.51 MByte
ST Microelectronics
N-channel 600V, 0.145Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
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