STW27NM60ND Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-247-3
Description:	N-channel 600V, 0.13Ω, 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247
Documentation:	STW27NM60ND Datasheet (19 Pages)Package Outline Dimension on11 Page 12 Page 13 Page 14 Page 15 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

STW27NM60ND Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Drain to Source Resistance (on) (Rds)	130 mΩ
Power Dissipation	160W (Tc)
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Rise Time	30 ns
Input Capacitance (Ciss)	2400pF @50V(Vds)
Input Power (Max)	160 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160W (Tc)