| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-CH |
| Power Dissipation | 170 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1440 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 22A |
| Rise Time | 7.2 ns |
| Input Capacitance (Ciss) | 1440pF @100V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This STW28N60M2 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 170000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
21 Pages / 1.08 MByte
ST Microelectronics
21 Pages / 1.15 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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