| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 88 mΩ |
| Polarity | N-CH |
| Power Dissipation | 250 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 650 V |
| Continuous Drain Current (Ids) | 34A |
| Rise Time | 13.5 ns |
| Input Capacitance (Ciss) | 2500pF @100V(Vds) |
| Input Power (Max) | 250 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Looking for a component that can both amplify and switch between signals within your circuit? The STW40N60M2 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 250000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
23 Pages / 1.57 MByte
ST Microelectronics
23 Pages / 1.55 MByte
ST Microelectronics
MOSFET N-CH 600V 34A TO-247
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