STW47NM60 Datasheet PDF - ST Microelectronics

DESCRIPTION

●This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche character

●istics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products.

●TYPICAL RDS(on) = 0.075Ω

●HIGH dv/dt AND AVALANCHE CAPABILITIES

●100% AVALANCHE TESTED

●LOW INPUT CAPACITANCE AND GATE CHARGE

●LOW GATE INPUT RESISTANCE

●TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

●APPLICATIONS

●The MDmesh™ family is very suitable for increasing

●power density of high voltage converters allowing

●system miniaturization and higher efficiencies.