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STW50N65DM2AG
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STW50N65DM2AG Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:MOSFETs
Case Package:TO-247-3
Description:TO-247 N-CH 650V 38A
Documentation:STW50N65DM2AG Datasheet (13 Pages)Package Outline Dimension on9 Page10 Page
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STW50N65DM2AG Datasheet PDF (13 Pages)
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STW50N65DM2AG Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)87 mΩ
PolarityN-CH
Power Dissipation300 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)650 V
Breakdown Voltage (Drain to Source)650 V
Continuous Drain Current (Ids)38A
Rise Time21 ns
Input Capacitance (Ciss)3200pF @100V(Vds)
Fall Time10.5 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)300W (Tc)
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STW50N65DM2AG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length20.15 mm
Size-Width15.75 mm
Size-Height5.15 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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STW50N65DM2AG Documents

STW50N65DM2AG Datasheet
ST Microelectronics
13 Pages / 0.62 MByte
STW50N65DM2AG Packaging
ST Microelectronics
12 Pages / 0.26 MByte

STW50N65DM2 Documents

STW50N65DM2AG Datasheet PDF
ST Microelectronics
TO-247 N-CH 650V 38A
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