| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.047 Ω |
| Polarity | N-Channel |
| Power Dissipation | 350 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 68 ns |
| Input Capacitance (Ciss) | 5800pF @50V(Vds) |
| Input Power (Max) | 350 W |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW55NM60ND is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● High dV/dt and avalanche capabilities
ST Microelectronics
12 Pages / 0.28 MByte
ST Microelectronics
12 Pages / 0.22 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
N-channel 600V, 0.047Ω, 51A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
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