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STW70N60DM2
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STW70N60DM2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:High Voltage MOS
Case Package:TO-247-3
Description:Power MOSFET, N Channel, 66A, 600V, 0.037Ω, 10V, 4V
Documentation:STW70N60DM2 Datasheet (13 Pages)Package Outline Dimension on9 Page10 Page
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STW70N60DM2 Datasheet PDF (13 Pages)
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STW70N60DM2 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.037 Ω
PolarityN-Channel
Power Dissipation446 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Rise Time67 ns
Input Capacitance (Ciss)5508pF @100V(Vds)
Fall Time10.4 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)446W (Tc)
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STW70N60DM2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length15.75 mm
Size-Width5.15 mm
Size-Height20.15 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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STW70N60DM2 Documents

STW70N60DM2 Datasheet
ST Microelectronics
13 Pages / 0.57 MByte
STW70N60DM2 Other Datasheet PDF
ST Microelectronics
20 Pages / 1.08 MByte
STW70N60DM2 Packaging
ST Microelectronics
12 Pages / 0.7 MByte
STW70N60DM2 Notice File
ST Microelectronics
3 Pages / 0.11 MByte

STW70N60 Documents

STW70N60M2 Datasheet PDF
ST Microelectronics
TO-247 N-CH 600V 68A
STW70N60DM2 Datasheet PDF
ST Microelectronics
Power MOSFET, N Channel, 66A, 600V, 0.037Ω, 10V, 4V
STW70N60M2-4 Datasheet PDF
ST Microelectronics
MOS Power Transistors HV (>= 200V)
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