TYPE | DESCRIPTION |
---|
Case/Package | TO-247-4 |
Power Dissipation | 450W (Tc) |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 5200pF @100V(Vds) |
Fall Time | 9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 450W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 68A (Tc) 450W (Tc) Through Hole TO-247
ST Microelectronics
13 Pages / 0.99 MByte
ST Microelectronics
Power MOSFET, N Channel, 66A, 600V, 0.037Ω, 10V, 4V
ST Microelectronics
MOS Power Transistors HV (>= 200V)
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