| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 1500 mW |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 1A |
| hFE Min | 8 |
| hFE Max | 8 @0.5A, 2V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.8 mm |
| Size-Width | 3.8 mm |
| Size-Height | 4.5 mm |
| Operating Temperature | 150℃ (TJ) |
If your circuit"s specifications require a device that can handle high levels of voltage, STMicroelectronics" NPN STX13003-AP general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
ST Microelectronics
11 Pages / 0.33 MByte
ST Microelectronics
13 Pages / 0.36 MByte
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