| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel, NPN |
| Power Dissipation | 2.8 W |
| Breakdown Voltage (Collector to Emitter) | 500 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 12 @500mA, 5V |
| hFE Max | 17 |
| Input Power (Max) | 2.8 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Size-Length | 4.95 mm |
| Size-Width | 3.94 mm |
| Size-Height | 4.95 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger.
●Features
●■ High voltage capability
●■ High DC current gain
●■ Minimum lot-to-lot spread for reliable operation
●Applications
●■ Switching mode power supply
●■ Battery charger
ST Microelectronics
8 Pages / 0.09 MByte
ST Microelectronics
1 Pages / 0.01 MByte
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