| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | N-Channel |
| Power Dissipation | 625 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 96A |
| Rise Time | 79 ns |
| Input Capacitance (Ciss) | 16870pF @100V(Vds) |
| Input Power (Max) | 625 W |
| Fall Time | 140 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5.9 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | 150℃ (TJ) |
The STY112N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Higher VDSS rating
● Higher dV/dt capability
● Easy to drive
● 100% Avalanche tested
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